Power MOSFET Basics
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چکیده
Power MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) are the most commonly used power devices due to their low gate drive power, fast switching speed and superior paralleling capability. Most power MOSFETs feature a vertical structure with Source and Drain on opposite sides of the wafer in order to support higher current and voltage. Figure 1a and 1b show the basic device structures of Trench and Planar MOSFETs respectively. Trench MOSFETs are mainly used for <200V voltage rating due to their higher channel density and thus lower on-resistance. Planar MOSFETs are good for higher voltage ratings since onresistance is dominated by epi-layer resistance and high cell density is not beneficial. The basic MOSFET operation is the same for both structures. Unless specified, the N-channel trench MOSFET is discussed in this application note.
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